Need help? We are here

Consider an abrupt Si pn + junction that has 1015 acceptors cm-3 on the p-side and 1019 donors on the nside.
The minority carrier recombination times are ?e = 490 ns for electrons in the p-side and ?h = 2.5 ns
for holes in the n -side. The cross-sectional area is 1 mm2. Assuming a long diode, calculate the
current, I, through the diode at room temperature when the voltage, V, across it is 0.6 V. What are V/I
and the incremental resistance (rd) of the diode and why are they different?
Edit questions attachments.. explain

Connect with a professional writer in 5 simple steps

Please provide as many details about your writing struggle as possible

Academic level of your paper

Type of Paper

When is it due?

How many pages is this assigment?